上海中科神光光电产业有限公司
光电材料事业部
氮化镓晶片
Free-standing GaN Substrates (Customized size)
生长方法: HVPE,氢化物气相外延,
性能参数Specifications:
| 产品型号Item | GaN-FS-10 | GaN-FS-15 |
| 尺寸Dimensions | 10.0mm×10.5mm | 14.0mm×15.0mm |
| 孔洞密度Marco Defect Density | A Level | 0 cm-2 |
| B Level | ≤ 2 cm-2 | |
| 厚度Thickness | Rank 300 | 300 ± 25 µm |
| Rank 350 | 350 ± 25 µm | |
| Rank 400 | 400 ± 25 µm | |
| 晶体取向Orientation | C-axis(0001) ± 0.5° | |
| TTV(Total Thickness Variation) | ≤15 µm | |
| 弯曲度BOW | ≤20 µm | |
| 导电类型Conduction Type | N-type | Semi-Insulating |
| 电阻率Resistivity(300K) | < 0.5 Ω·cm | >10E6 Ω·cm |
| 位错密度Dislocation Density | Less than 5x106 cm-2 | |
| 有效面积Useable Surface Area | > 90% | |
| 抛光Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |
| 包装Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |
性能参数Specifications:
| 产品型号Item | GaN-FS-N-1.5 | |||
| 尺寸Dimensions | Ф 25.4mm ± 0.5mm | Ф 38.1mm ± 0.5mm | Ф 45.0mm ± 0.5mm | |
| 孔洞密度Marco Defect Density | LD Level | > 90% | ||
| LED Level | > 78% | |||
| 厚度 Thickness | 300 ± 25 µm | |||
| 晶体取向Orientation | C-axis(0001) ± 0.5° | |||
| 主定位边Orientation Flat | (1-100) ± 0.5°, 12 ± 1mm | |||
|
次定位边Secondary Orientation Flat | (11-20) ± 3°, 6 ± 1mm | |||
| TTV(Total Thickness Variation) | ≤15 µm | |||
| 弯曲度BOW | ≤20 µm | |||
| 导电类型Conduction Type | N-type | Semi-Insulating | ||
| 电阻率Resistivity(300K) | < 0.5 Ω·cm | >106 Ω·cm | ||
| 位错密度Dislocation Density | Less than 5x106 cm-2 | |||
| 有效面积Useable Surface Area | > 90% | |||
| 抛光Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |||
| 包装Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |||
