AlN ceramic substrate has high thermal conductivity, good electrical performance and non-toxic. It’s thermal expansion coefficient close to Si wafer, and it is an ideal material to replace BeO ceramics. It is mainly used in high-density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductor refrigeration and other products as high-performance substrate materials and packaging materials.。
| Item No. | Density（g/cm3） | Thermal Conductivity（W/m.K） | Thermal Expansion（x10-6/℃ | Dielectric Strength（Kv/mm） | Dielectric Constant（at 1MHz） | Loss Tangent（x104@1 MHz） | Volume Resistivity（ohm—cm） | Flexural Strength（Kg/mm2） |
| SD5111 | >3.20 | 80~100 | <4.5 | >15 | 9.0 | 3~10 | >1013 | >20 |
| SD5113 | >3.25 | 100~130 | <4.3 | >15 | 8.7 | 3~7 | >1014 | >25 |
| SD5115 | >3.25 | 140~170 | <4.3 | >15 | 8.7 | 3~7 | >1014 | >28 |
| SD5116 | 3.26 | >170 | <4.2 | >15 | 8.7 | 3~7 | >1014 | >30 |
