Ge can be used to make materials such as semiconductor devices, infrared optical devices, and solar cell substrates.
| Main Property Parameters | |||
| Growth Method | Czochralski | ||
| Crystal System | Cubic | ||
| Crystal Lattice Constant | a=5.65754 Å | ||
| Density | 5.323g/cm3 | ||
| Melt Point | 937.4℃ | ||
| Doping Element | no | Sb | Ga |
| Type | / | N | P |
| Resistivity | ＞35Ωcm | 0.01~35 Ωcm | 0.05~35 Ωcm |
| EPD | ＜4×103∕cm2 | ＜4×103∕cm2 | ＜4×103∕cm2 |
| Dimension(mm) | 10x3，10x5，10x10，15x15，，20x15，20x20， | ||
| Dia50.8 mm ,dia76.2mm, Dia100 mm | |||
| Thickness | 0.5mm，1.0mm | ||
| Polishing | One side or two sides | ||
| Crystal Orientation | <100>、<110>、<111>、±0.5º | ||
| Crystal Plane Orientation Accuracy | ±0.5° | ||
| Edge Orientation Accuracy | 2°（special requirements <1°） | ||
| Bevel Wafer | According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed. | ||
| Surface Roughness | ≤5Å（5µm×5µm） | ||
| Packaging | Clean bag (100), Super clean room (1000) | ||
