Silicon crystals are used as a semiconductor material, high-power transistor, rectifier, solar cells, etc.
| Main performance parameters | |||
| Crystal structure | face-centered cubic | ||
| Melting poingt（℃） | 1420 | ||
| Density | 2.4（g/cm3） | ||
| Dopant | Undoped | Boron | Phosphorus |
| Conduction type | I | P | N |
| Resistivity | Ø 1000Ωcm | 10-3~1000Ωcm | 10-3~1000Ωcm |
| EPD | ≤100∕cm2 | ≤100∕cm2 | ≤100∕cm2 |
| Oxygen content（∕cm3） | ≤1~1.8×1018 | ≤1~1.8×1018 | ≤1~1.8×1018 |
| Carbon content（∕cm3） | ≤5×1016 | ≤5×1016 | ≤5×1016 |
| Dimension | 5x5mm ,10×10mm、20×20mm, Ø50.8mm, Ø76.2mm, Ø100mm Special direction and size of the substrate can be customized according to the customer need | ||
| Thickness | 0.5mm、1.0mm | ||
| Dimension tolerance | <±0.1mm | ||
| Thickness tolerance | <±0.025mm | ||
| Polishing | One side or two sides | ||
| Orientation tolerance | ±0.5° | ||
| Flat orientation tolerance | 2°（special requirements 1°） | ||
| Orientation | <100>、<110>、<111>等 | ||
| Packing | Class 100 clean bag, Class 1000 clean room | ||
