Zinc oxide (ZnO) is a good substrate for GaN thin film. It has large exciton binding energy of 60 meV and a bandwidth of 3.73 eV at room temperature, making it a luminescent material for ultraviolet and visible light. Due to the transparency in the visible region, the large electromechanical coupling coefficient and the properties of adsorption and desorption of gas molecules on its surface, it is expected to be used in energy limiters with high peak energy, GaN substrates with large size and high quality, and wireless communications which beyond 5GHz in the future, high electric field equipment, high temperature and high energy electronic devices etc..
Properties
| Structure | Hexagonal |
| Lattice Constant | a=3.252Å c=5.313 Å |
| Density | 5.7（g/cm3） |
| Method for Growth | Hydrothermal |
| Hardness (Mho) | 4（mohs） |
| Melting Point | 1975℃ |
| Thermal Expansion Coefficient | 6.5 x 10-6 /℃//a 3.7 x 10-6 /℃//c |
| Specific Hear | 0.125 cal /g.m |
| Thermal-electric constand | 1200 mv/k @ 300 ℃ |
| Heat Conductivity | 0.006 cal/cm/k |
| Transmission Range | 0.4-0.6 um > 50% at 2mm |
PRODUCT DATA SHEET OF OPTOELECTRONICS MATERIALS
| Crystal Orientation | <0001>、<11-20>、<10-10>±0.5º |
| Size(mm) | 25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm Custom-made size upon request |
| Surface Roughness | <=5A Atm Force Microscopy(AFM) report can be provided |
| Polishing | Single polishing or double polishing |
| Package | Class 100 clean bag, Class 1000 super clean room |
