Gallium arsenide (chemical formula: GaAs) is a compound synthesized by two elements of gallium and arsenic. It is an important group IIIA and group VA compound semiconductor material. And it can be used to make microwave integrated circuits, infrared light-emitting diodes, semiconductor lasers and solar cells. GaAs is often used as the base material for the epitaxial growth of III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide, and so on.
| Main Property Parameters | |||||||
| Single Crystal | Doping | Conductivity Type | Carrier Concentration cm-3 | Dislocation Density cm-2 | Growth Method | Standard Substrate | |
| GaAs | None | Si | / | <5×105 | LEC HB Dia3″ | Dia3″×0.5 Dia2″×0.5 | |
| Si | N | >5×1017 | |||||
| Cr | Si | / | |||||
| Fe | N | ~2×1018 | |||||
| Zn | P | >5×1017 | |||||
| Dimension（mm） | 25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm According to customer needs, substrates with special orientation and size can be customized. | ||||||
| Surface Roughness | Surface roughness(Ra):<=5A | ||||||
| Polishing | One side or two sides | ||||||
| Packaging | Clean bag (100), Super clean room (1000) | ||||||
