Zirconia(ZrO2) single crystal wafer is one of the most early high temperature superconducting substrate. Because Zirconia needs to be dopped with yttrium to stable its structure, normally the dopped yttrium dopped Zirconia(YSZ) single crystal is used. The mechanical stability and chemical stability of YSZ is excellent, and it has relatively lower price, which is especially applicable in making positive film.
Parameters
| Structure | Cubic |
| Growth Method | Electric-Arc fusion Method |
| Lattice Constant | a=5.147Å |
| Melting Point | 2700℃ |
| Density | 6.0g/cm3 |
| Hardness (Mho) | 8-8.5 |
| Purity | 99.99% |
| Thermal Expansion Coefficient | 10.3×10-6/℃ |
| Dielectric constant | ε=27 |
| Size | 10×3mm, 10×5mm, 10×10mm, 15×15mm, 20×15mm, 20×15mm Customize size and crystal orientation upon request |
| Thickness | 0.5mm,1.0mm |
| Dimensional Tolerance | <±0.1mm |
| Thickness tolerance | <±0.015m, ±0.005mm for special needs） |
| Polishing | Single polishing or double polishing |
| Crystal Orientation | <100>、<110>、<111> etc. |
| Crystal Orientaion Tolerance | ±0.5° |
| Edge Orientation Accuracy | 2°（1°for special needs） |
| Chamfered Wafer | Wafer edge orientation can be customized from1°~45° upon special request |
| Package | Class 100 clean bag, Class 1000 super clean room |
