NdGaO3 is a new type of substrate developed in the past decade, mainly used as a substrate for epitaxial film growth of high-temperature superconductors (such as YBCO) and magnetic materials. Because the lattice mismatch between NdGaO3 and YBCO is very small (~0.27%), and there is no structural phase change, a good quality film can be epitaxially grown on the NdGaO3 substrate.
| Main performance parameters | |
| Crystal structure | orthogonal |
| Lattice constant(Å) | a=5.43、b=5.50、c=7.71 |
| Melting point（℃） | 1600℃ |
| Density | 7.57g/cm3 |
| Dielectric constants | 25 |
| Crystal growth method | CZ |
| Size | 10x3，10x5，10x10，15x15，，20x15，20x20， |
| Thickness | 0.5mm，1.0mm |
| Polishing | Single-sided or double-sided |
| Crystal orientation | ＜100＞ ＜110＞ ＜111＞ |
| Crystal plane orientation accuracy | ±0.5° |
| Edge orientation accuracy | 2°（Special requirements can reach within 1°） |
| Bevel wafer | According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed |
| Ra: | ≤5Å（5µm×5µm） |
| Package | Class 100 clean bag, Class 1000 super clean room |
