Lanthanum aluminate (LaAlO3) single crystal is currently the most important industrialized, large-size single crystal material for high-temperature superconducting thin film substrates. It is grown by the Czochralski method, and single crystals and substrates with a diameter of 2 inches and larger can be obtained. It matches well with high-temperature superconducting materials and lattices such as YBaCuO, has low dielectric constant and low microwave loss, so it is suitable for making high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in telecommunication). There are huge reality and potential application prospects.
| Main performance parameters | ||
| Crystal structure | M6(normal temperature) | M3(>435℃) | 
| Lattice constant | M6 a=5.357A c=13.22 A | M3 a=3.821 A | 
| Melting point(℃) | 2080 | |
| Density | 6.52(g/cm3) | |
| Hardness | 6-6.5(mohs) | |
| Thermal expansion coefficient | 9.4x10-6/℃ | |
| Dielectric constants | ε=21 | |
| Secant loss(10ghz) | ~3×10-4@300k,~0.6×10-4@77k | |
| Color and appearance | To anneal and conditions differ from brown to brownish | |
| Chemical stability | Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4 | |
| Characteristics | For microwave electron device | |
| Growth method | Czochralski method | |
| Size | 10x3,10x5,10x10,15x15,,20x15,20x20, | |
| Ф15,Ф20,Ф1″,Ф2″,Ф2.6″ | ||
| Thickness | 0.5mm,1.0mm | |
| Polishing | Single-sided or double-sided | |
| Crystal orientation | <100> <110> <111> | |
| Crystal plane orientation accuracy | ±0.5° | |
| Edge orientation accuracy | 2°(Special requirements can reach within 1°) | |
| Bevel wafer | According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed | |
| Ra: | ≤5Å(5µm×5µm) | |
| Package | Class 100 clean bag, Class 1000 super clean room | |