Magnesium aluminate (MgAl2O4) can be used as the substrate substrate of III-V nitride device thin film, and is also widely used in acoustic wave and microwave devices and fast IC epitaxial substrates. In addition, it has a good lattice matching with epitaxial silicon thin layer. The self-doping of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, and the expansion coefficient of silicon is relatively close, the hardness is small, the processing performance is better, etc., so it can be used as a high-quality insulating lining for ultra-high-speed large-scale integrated circuits One of the bottom materials. At present, we can provide twin-free, crystal-domain-free, and ultra-smooth high-quality substrate substrates with a maximum diameter of 2 inches (FWHM<50 arcsec, roughness Ra<0.5 nm).
| Main performance parameters | |
| Crystal growth method | CZ |
| Crystal structure | Cube |
| Lattice constant | a=8.085Å |
| Melting point（℃） | 2130℃ |
| Density（g/cm3） | 3.64g/cm3 |
| Hardness | 8 (mohs) |
| Color | White transparent |
| Coefficient of thermal expansion | 7.45×10-6 /℃ |
| Size | 10x3，10x5，10x10，15x15，，20x15，20x20， |
| Ф1″，Ф2″, | |
| Thickness | 0.5mm，1.0mm |
| Polishing | Single-sided or double-sided |
| Crystal orientation | <100>、<110>、<111>±0.5º |
| Crystal plane orientation accuracy | ±0.5° |
| Edge orientation accuracy | 2°（Special requirements can reach within 1°） |
| Bevel wafer | According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed |
| Ra: | ≤5Å（5µm×5µm） |
| Package | Class 100 clean bag, Class 1000 super clean room |
