Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.
Specifications:
| Item | GaN-FS-10 | GaN-FS-15 |
| Dimensions | 10.0mm×10.5mm | 14.0mm×15.0mm |
| Marco Defect Density | A Level | 0 cm-2 |
| B Level | ≤ 2 cm-2 | |
| Thickness | Rank 300 | 300 ± 25 µm |
| Rank 350 | 350 ± 25 µm | |
| Rank 400 | 400 ± 25 µm | |
| Orientation | C-axis(0001) ± 0.5° | |
| TTV(Total Thickness Variation) | ≤15 µm | |
| BOW | ≤20 µm | |
| Conduction Type | N-type | Semi-Insulating |
| Resistivity(300K) | < 0.5 Ω·cm | >106 Ω·cm |
| Dislocation Density | Less than 5x106 cm-2 | |
| Useable Surface Area | > 90% | |
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |
Specifications:
| Item | GaN-FS-N-1.5 | |||
| Dimensions | Ф 25.4mm ± 0.5mm | Ф 38.1mm ± 0.5mm | Ф 45.0mm ± 0.5mm | |
| Marco Defect Density | LD Level | > 90% | ||
| LED Level | > 78% | |||
| Thickness | 300 ± 25 µm | |||
| Orientation | C-axis(0001) ± 0.5° | |||
| Orientation Flat | (1-100) ± 0.5°, 12 ± 1mm | |||
| Secondary Orientation Flat | (11-20) ± 3°, 6 ± 1mm | |||
| TTV(Total Thickness Variation) | ≤15 µm | |||
| BOW | ≤20 µm | |||
| Conduction Type | N-type | Semi-Insulating | ||
| Resistivity(300K) | < 0.5 Ω·cm | >106 Ω·cm | ||
| Dislocation Density | Less than 5x106 cm-2 | |||
| Useable Surface Area | > 90% | |||
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |||
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |||
