MgAl2O4

铝酸镁(尖晶石)单晶广泛应用于声波和微波器件及快速IC外延基片。同时研究发现它是好的III-V族氮化物器件的衬底。MgAl2O4晶体由于很难维持它的单晶结构而难以生长,经过几年的努力,目前科晶公司能够提供世界上质量最优尺寸的MgAl2O4晶体。

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Technical Parameter

  Magnesium aluminate (MgAl2O4) can be used as the substrate substrate of III-V nitride device thin film, and is also widely used in acoustic wave and microwave devices and fast IC epitaxial substrates. In addition, it has a good lattice matching with epitaxial silicon thin layer. The self-doping of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, and the expansion coefficient of silicon is relatively close, the hardness is small, the processing performance is better, etc., so it can be used as a high-quality insulating lining for ultra-high-speed large-scale integrated circuits One of the bottom materials. At present, we can provide twin-free, crystal-domain-free, and ultra-smooth high-quality substrate substrates with a maximum diameter of 2 inches (FWHM<50 arcsec, roughness Ra<0.5 nm).

    

Main performance parameters

Crystal growth method

CZ

Crystal structure

Cube

Lattice constant

a=8.085Å

Melting point(℃)

2130℃

Density(g/cm3)

3.64g/cm3

Hardness

8 (mohs)

Color

White transparent

Coefficient of thermal expansion

7.45×10-6 /℃

Size

10x3,10x5,10x10,15x15,,20x15,20x20,

Ф1″,Ф2″,

Thickness

0.5mm,1.0mm

Polishing

Single-sided or double-sided

Crystal orientation

<100>、<110>、<111>±0.5º

Crystal plane orientation accuracy

±0.5°

Edge orientation accuracy

2°(Special requirements can reach within 1°)

Bevel wafer

According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed

Ra:

≤5Å(5µm×5µm)

Package

Class 100 clean bag, Class 1000 super clean room

 

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