As one of the most important compound semiconductor materials, InP single crystal materials are key materials for the production of InP-based laser diodes (LD), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize the emission of information in optical fiber communications, Dissemination, amplification, acceptance and other functions. InP is also very suitable for high-frequency devices, such as high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT). Due to its superior characteristics, it is used in optical fiber communication, microwave, millimeter wave, anti- Many high-tech fields such as radiant solar cells and heterojunction transistors are widely used. The main growth methods of InP single crystal materials include traditional liquid-sealed Czochralski technology (LEC), improved LEC technology, and gas pressure controlled Czochralski technology (VCZ). /PC-LEC)/Vertical Gradient Solidification Technology (VGF)/Vertical Bridgman Technology (VB), etc.
Crystal | Structure | Crystal orientation | Melting point oC | density g/cm3 | Forbidden band width | |
InP | cube, a=5.869 A | <100> | 1600 | 4.79 | 1.344 | |
Main performance parameters | |||||||
Single Crystal | Dopant | Conduction Type | Carrier Concentration cm-3 | Mobility (cm2/V.s) | Dislocation density (cm-2) | Standard substrate | |
InP | Undoped | N | (0.4-2)´1016 | (3.5-4)´103 | £5´104 | Φ2″×0.35mm Φ3″×0.35mm | |
InP | S | N | (0.8-3)´1018 (4-6)´1018 | (2.0-2.4)´103 (1.3-1.6)´103 | £ 3´104 £2´103 | Φ2″×0.35mm Φ3″×0.35mm | |
InP | Zn | P | (0.6-2) ´1018 | 70-90 | £ 2´104 | Φ2″×0.35mm Φ3″×0.35mm | |
InP | Te | N | 107-108 | ³2000 | £3´104 | Φ2″×0.35mm Φ3″×0.35mm | |
Size(mm) | Dia50.8x0.35mm,10×10×0.35mm、10×5×0.35mm Can be customized according to customer needs, special direction and size of the substrate. | ||||||
Surface roughness | Surface roughness(Ra):<=5A | ||||||
Polishing | Single-sided or double-sided | ||||||
Package | Class 100 clean bag, Class 1000 super clean room | ||||||